𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Optical polarization and internal quantum efficiency for InGaN quantum wells on a-plane GaN

✍ Scribed by E.Y. Lin; C.Y. Chen; T.S. Lay; Z.X. Peng; T.Y. Lin; T.C. Wang; J.D. Tsay


Book ID
103888096
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
410 KB
Volume
405
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Local internal quantum efficiency of a g
✍ J. Danhof; U. T. Schwarz; T. Meyer; C. Vierheilig; M. Peter πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 254 KB

## Abstract Excitation density‐dependent microphotoluminescence measurements were performed on a green light (515 nm) emitting InGaN/GaN multiquantum well sample of low threading dislocation density (5 × 10^7^ cm^βˆ’2^). For the observed structure we find a different shape of the local internal quant

Crystalline dependence of optical and in
✍ Sung-Nam Lee; Jihoon Kim; Hyunsoo Kim πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 647 KB

We investigated the optical and the crystal qualities of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane (1 1 -2 0) GaN/r-sapphire by introducing the novel 2-step growth method without low temperature GaN or AlN buffer layer. In spite of achievement of macroscopic specular surface structure

Indium incorporation in InGaN/GaN quantu
✍ Lai, K. Y. ;Paskova, T. ;Wheeler, V. D. ;Chung, T. Y. ;Grenko, J. A. ;Johnson, M πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 372 KB

## Abstract InGaN/GaN quantum wells (QWs) grown at identical conditions on __m__‐plane GaN and __c__‐plane sapphire substrates were characterized by several techniques, aiming to clarify the reason for different emission wavelengths often observed in similar LED structures with __m__‐ and __c__‐pla