## Abstract Excitation densityβdependent microphotoluminescence measurements were performed on a green light (515βnm) emitting InGaN/GaN multiquantum well sample of low threading dislocation density (5βΓβ10^7^βcm^β2^). For the observed structure we find a different shape of the local internal quant
Optical polarization and internal quantum efficiency for InGaN quantum wells on a-plane GaN
β Scribed by E.Y. Lin; C.Y. Chen; T.S. Lay; Z.X. Peng; T.Y. Lin; T.C. Wang; J.D. Tsay
- Book ID
- 103888096
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 410 KB
- Volume
- 405
- Category
- Article
- ISSN
- 0921-4526
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We investigated the optical and the crystal qualities of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane (1 1 -2 0) GaN/r-sapphire by introducing the novel 2-step growth method without low temperature GaN or AlN buffer layer. In spite of achievement of macroscopic specular surface structure
## Abstract InGaN/GaN quantum wells (QWs) grown at identical conditions on __m__βplane GaN and __c__βplane sapphire substrates were characterized by several techniques, aiming to clarify the reason for different emission wavelengths often observed in similar LED structures with __m__β and __c__βpla