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Electronic and optical properties of nonpolar a-plane GaN quantum wells

✍ Scribed by Schulz, S.; Badcock, T.; Moram, M.; Dawson, P.; Kappers, M.; Humphreys, C.; O’Reilly, E.

Book ID
111964594
Publisher
The American Physical Society
Year
2010
Tongue
English
Weight
459 KB
Volume
82
Category
Article
ISSN
1098-0121

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Crystalline dependence of optical and interfacial properties of InGaN/GaN quantum wells on nonpolar a-plane GaN/r-sapphire
✍ Sung-Nam Lee; Jihoon Kim; Hyunsoo Kim 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 647 KB

We investigated the optical and the crystal qualities of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane (1 1 -2 0) GaN/r-sapphire by introducing the novel 2-step growth method without low temperature GaN or AlN buffer layer. In spite of achievement of macroscopic specular surface structure