We investigated the optical and the crystal qualities of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane (1 1 -2 0) GaN/r-sapphire by introducing the novel 2-step growth method without low temperature GaN or AlN buffer layer. In spite of achievement of macroscopic specular surface structure
Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells
✍ Scribed by A. Molina; A. García-Cristóbal; A. Cantarero
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 395 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0026-2692
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