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Laser Scribing of Sapphire Substrate to Increase Side Light Extraction of GaN-Based Light Emitting Diodes

โœ Scribed by Chen, K.C.; Su, Y.K.; Chun-Liang Lin; Hsu, H.C.


Book ID
115373551
Publisher
Optical Society of America
Year
2011
Tongue
English
Weight
525 KB
Volume
29
Category
Article
ISSN
0733-8724

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## Abstract In order to improve GaNโ€based lightโ€emitting diode (LED) performance, a sapphireโ€etched verticalโ€electrode nitride semiconductor (SEVENS) LED is fabricated by a chemical wet etching technique. The lightโ€output power, heat dissipation, and reverse electrostatic discharge (ESD) characteri