Gallium nitride (GaN), an important semiconductor having a wide direct band gap (3.39 eV at room temperature), is potentially useful in a blue and ultraviolet light emitter, and in high temperature/high power electronic devices. [1] The future of full-colored, flat panel displays, blue lasers, and o
β¦ LIBER β¦
Gallium Nitride Nanotubes by the Conversion of Gallium Oxide Nanotubes.
β Scribed by Junqing Hu; Yoshio Bando; Dmitri Goldberg; Quanlin Liu
- Publisher
- John Wiley and Sons
- Year
- 2003
- Weight
- 57 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0931-7597
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