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Gallium Nitride Nanotubes by the Conversion of Gallium Oxide Nanotubes

✍ Scribed by Junqing Hu; Yoshio Bando; Dmitri Golberg; Quanlin Liu


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
137 KB
Volume
115
Category
Article
ISSN
0044-8249

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Gallium nitride (GaN), an important semiconductor having a wide direct band gap (3.39 eV at room temperature), is potentially useful in a blue and ultraviolet light emitter, and in high temperature/high power electronic devices. [1] The future of full-colored, flat panel displays, blue lasers, and o

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**Ga~2~O~3~–ZnO composite coaxial nanotubes** have been fabricated via a simple process combining thermal reaction and physical evaporation. The resulting nanotubes are either empty or partially or completely filled with Ga (see Figure), forming Ga (core)–Ga~2~O~3~ (interlayer)–ZnO (outer shell) thr