Gallium nitride (GaN), an important semiconductor having a wide direct band gap (3.39 eV at room temperature), is potentially useful in a blue and ultraviolet light emitter, and in high temperature/high power electronic devices. [1] The future of full-colored, flat panel displays, blue lasers, and o
Synthesis of Gallium-Filled Gallium Oxide–Zinc Oxide Composite Coaxial Nanotubes
✍ Scribed by J.Q. Hu; Y. Bando; Z.W. Liu
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 146 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0935-9648
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✦ Synopsis
Ga~2~O~3~–ZnO composite coaxial nanotubes have been fabricated via a simple process combining thermal reaction and physical evaporation. The resulting nanotubes are either empty or partially or completely filled with Ga (see Figure), forming Ga (core)–Ga~2~O~3~ (interlayer)–ZnO (outer shell) three‐layer coaxial nanocables. The photoluminescence of the nanostructures is investigated and a mechanism for their formation is proposed.
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