Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

✍ Scribed by Sunho Jeong; Young-Geun Ha; Jooho Moon; Antonio Facchetti; Tobin J. Marks

• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 300 KB
• Volume: 22
• Category: Article
• ISSN: 0935-9648
• DOI: 10.1002/adma.200902450