Gallium Nitride Nanotubes by the Conversion of Gallium Oxide Nanotubes

✍ Scribed by Junqing Hu; Yoshio Bando; Dmitri Golberg; Quanlin Liu

• Publisher: John Wiley and Sons
• Year: 2003
• Tongue: English
• Weight: 137 KB
• Volume: 42
• Category: Article
• ISSN: 0044-8249
• DOI: 10.1002/anie.200351001

✦ Synopsis

Gallium nitride (GaN), an important semiconductor having a wide direct band gap (3.39 eV at room temperature), is potentially useful in a blue and ultraviolet light emitter, and in high temperature/high power electronic devices. [1] The future of full-colored, flat panel displays, blue lasers, and optical communication is likely to be based on GaN. [2] Nanotubular structures have brought enormous breakthroughs in modern science and technology, including electronics, mechanics, physics, and chemistry. [3] There have been many studies that have focused on compounds characterized by layered structures, for example, graphite, [4] boron nitride, [5] and metal disulfides (MoS 2 , WS 2 , TiS 2 , ZrS 2 , and HfS 2 ). [6] Recent reports indicated that under appropriate experimental conditions, geometrically closed, concentric tubes could be constructed from nonlayered structural materials. Thus far, there has been great progress in the development of new nanotubes; nanotubes of metal oxides (TiO 2 , [6] Ga 2 O 3 , In 2 O 3 , [8] ZnO, [9] and Al 2 O