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Gallium nitride formed by vapour deposition and by conversion from gallium arsenide

โœ Scribed by K. R. Faulkner; D. K. Wickenden; B. J. Isherwood; B. P. Richards; I. H. Scobey

Publisher
Springer
Year
1970
Tongue
English
Weight
809 KB
Volume
5
Category
Article
ISSN
0022-2461

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Gallium nitride (GaN), an important semiconductor having a wide direct band gap (3.39 eV at room temperature), is potentially useful in a blue and ultraviolet light emitter, and in high temperature/high power electronic devices. [1] The future of full-colored, flat panel displays, blue lasers, and o