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GaAS LED with InAs QDs

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
43 KB
Volume
18
Category
Article
ISSN
0961-1290

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πŸ“œ SIMILAR VOLUMES

Localization of defects in InAs QD symme
Localization of defects in InAs QD symmetric InGaAs/GaAs DWELL structures
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The photoluminescence (PL), its power and temperature dependences have been studded for the ensembles of InAs quantum dots (QD) embedded in symmetric In 0.15 Ga 0.85 As/GaAs quantum wells prepared at different QD growth temperatures from the range 470-535 1C. The solution of the set of rate equation

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Band discontinuity in GaAs/AlAs superlat
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✍ T. Saito; Y. Hashimoto; T. Ikoma πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 128 KB

We have theoretically investigated the valence-band discontinuity \(\left(\Delta E_{v}\right)\) at the (100) GaAs/AlAs interface with the InAs strained insertion-layer. The theoretical calculation is carried out by the self-consistent tight-binding method with the \(s p^{3} s^{*}\) basis in the \((\