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Different growth mechanisms of bimodal InAs/GaAs QDs

✍ Scribed by G.Y. Zhou; Y.H. Chen; X.L. Zhou; B. Xu; X.L. Ye; Z.G. Wang

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
398 KB
Volume
43
Category
Article
ISSN
1386-9477

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The photoluminescence (PL), its power and temperature dependences have been studded for the ensembles of InAs quantum dots (QD) embedded in symmetric In 0.15 Ga 0.85 As/GaAs quantum wells prepared at different QD growth temperatures from the range 470-535 1C. The solution of the set of rate equation