Both the density and the ordering of InP quantum dots (QDs) grown on In 0.48Ga0.52 P/GaAs are controlled through the growth conditions. The control of the alignment of the QDs is achieved by determining the morphology of the In 0.48 Ga 0.52 P buffer through its growth temperature. For buffer layer g
Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP
β Scribed by Jingzhi Yin; Xinqiang Wang; Zongyou Yin; Mingtao Li; Zhengting Li; Guotong Du; Shuren Yang
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 109 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0030-3992
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