๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Ion-channeling studies of InAs/GaAs quantum dots

โœ Scribed by H. Niu; C.H. Chen; H.Y. Wang; S.C. Wu; C.P. Lee


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
435 KB
Volume
241
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Excited States of InAs/GaAs Quantum Dots
โœ R. Heitz; F. Guffarth; I. Mukhametzhanov; O. Stier; A. Madhukar; D. Bimberg ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 107 KB ๐Ÿ‘ 2 views
Intersublevel Emission in InAs/GaAs Quan
โœ S. Sauvage; P. Boucaud; T. Brunhes; A. Lemaรฎtre; J.-M. Gรฉrard ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 115 KB ๐Ÿ‘ 2 views
Photoluminescence studies of self-assemb
โœ X. Mu; Y. J. Ding; Z. Wang; G. J. Salamo ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 398 KB

We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum

Deep levels induced by InAs/GaAs quantum
โœ M. Kaniewska; O. Engstrรถm; A. Barcz; M. Pacholak-Cybulska ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 209 KB