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Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

✍ Scribed by M. Helfrich; D.Z. Hu; J. Hendrickson; M. Gehl; D. Rülke; R. Gröger; D. Litvinov; S. Linden; M. Wegener; D. Gerthsen; T. Schimmel; M. Hetterich; H. Kalt; G. Khitrova; H.M. Gibbs; D.M. Schaadt

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
638 KB
Volume
323
Category
Article
ISSN
0022-0248

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✦ Synopsis

In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81 meV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.

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