Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrate for silicon photonics
β Scribed by Damien Bordel; Mohan Rajesh; Masao Nishioka; Emmanuel Augendre; Laurent Clavelier; Denis Guimard; Yasuhiko Arakawa
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 483 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum d
The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with Ga
Both the density and the ordering of InP quantum dots (QDs) grown on In 0.48Ga0.52 P/GaAs are controlled through the growth conditions. The control of the alignment of the QDs is achieved by determining the morphology of the In 0.48 Ga 0.52 P buffer through its growth temperature. For buffer layer g