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Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs

✍ Scribed by J.C. Rimada; M. Prezioso; L. Nasi; E. Gombia; R. Mosca; G. Trevisi; L. Seravalli; P. Frigeri; C. Bocchi; S. Franchi

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 634 KB
Volume: 165
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2008.10.007

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✦ Synopsis

In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15 Ga 0.85 As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening in the InAs/GaAs system. The samples have been investigated by atomic force microscopy (AFM), transmission electron microscope (TEM), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) techniques. The results obtained by the above techniques are compared and discussed.

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## Abstract We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaA