We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum
โฆ LIBER โฆ
Photoluminescence scanning on InAs/InGaAs quantum dot structures
โ Scribed by M. Dybiec; L. Borkovska; S. Ostapenko; T.V. Torchynska; J.L. Casas Espinola; A. Stintz; K.J. Malloy
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 300 KB
- Volume
- 252
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Photoluminescence studies of self-assemb
โ
X. Mu; Y. J. Ding; Z. Wang; G. J. Salamo
๐
Article
๐
2005
๐
John Wiley and Sons
๐
English
โ 398 KB
Electrical and structural characterizati
โ
J.C. Rimada; M. Prezioso; L. Nasi; E. Gombia; R. Mosca; G. Trevisi; L. Seravalli
๐
Article
๐
2009
๐
Elsevier Science
๐
English
โ 634 KB
In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15 Ga 0.85 As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening i
Photoluminescence Study of InAs/AlAs Qua
โ
K. Pierz; A. Miglo; P. Hinze; F.J. Ahlers; G. Ade; I. Hapke-Wurst; U. Zeitler; R
๐
Article
๐
2001
๐
John Wiley and Sons
๐
English
โ 130 KB
๐ 2 views
Time-Resolved Photoluminescence Cross-Co
โ
Herz, L.M. ;Phillips, R.T. ;Le Ru, E.C. ;Murray, R.
๐
Article
๐
2002
๐
John Wiley and Sons
๐
English
โ 81 KB
๐ 2 views
Photoluminescence study and parameter ev
โ
T.V. Torchynska; A. Vivas Hernandez; G. Polupan; E. Velazquez Lozada
๐
Article
๐
2011
๐
Elsevier Science
๐
English
โ 605 KB
Multiple excited state modification in I
โ
T.V. Torchynska; H.M. Alfaro Lopez; J.L. Casas Espinola; P.G. Eliseev; A. Stintz
๐
Article
๐
2005
๐
Elsevier Science
๐
English
โ 146 KB