In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15 Ga 0.85 As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening i
Electrical characterization of InAs/GaAs quantum dots by frequency spectroscopy
✍ Scribed by O. Engström; A. Eghtedari; M. Kaniewska
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 401 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0928-4931
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