𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrical characterization of InAs/GaAs quantum dots by frequency spectroscopy

✍ Scribed by O. Engström; A. Eghtedari; M. Kaniewska


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
401 KB
Volume
27
Category
Article
ISSN
0928-4931

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Electrical and structural characterizati
✍ J.C. Rimada; M. Prezioso; L. Nasi; E. Gombia; R. Mosca; G. Trevisi; L. Seravalli 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 634 KB

In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15 Ga 0.85 As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening i

Electron- and hole-related electrical ac
✍ P. Kruszewski; L. Dobaczewski; V.P. Markevich; C. Mitchell; M. Missous; A.R. Pea 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 131 KB

The electron-and hole-related electrical activity of the InAs/GaAs quantum dot system has been demonstrated with a use of the highresolution Laplace and conventional DLTS methods combined with below GaAs bandgap illumination. Without the illumination, the DLTS signal refers to the emission process o

Comprehensive study of InAs/GaAs quantum
✍ M. Kaczmarczyk; M. Kaniewska; J. Piscator; O. Engström; B. Surma; S. Lin; A.R. P 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 746 KB

Structural, optical, and electronic properties of self-organized InAs/GaAs quantum dots (QDs) were studied by means of atomic force microscopy (AFM), photoluminescence measurements (PL), and deep level transient spectroscopy (DLTS). We found that a well defined group of QDs with low size dispersion