We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing procedure (950 • C for 30 s). The photolumine
✦ LIBER ✦
Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing
✍ Scribed by B. Ilahi; Z. Zaâboub; B. Salem; D. Morris; V. Aimez; L. Sfaxi; H. Maaref
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 248 KB
- Volume
- 12
- Category
- Article
- ISSN
- 1369-8001
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