Tuning optical properties of high In content InGaAs/GaAs capped InAs quantum dots by post growth rapid thermal annealing
✍ Scribed by B. Ilahi; L. Sfaxi; G. Bremond; H. Maaref
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 137 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0928-4931
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✦ Synopsis
The effect of rapid thermal annealing on InAs quantum dots (QDs) capped with In 0.4 Ga 0.6 As/GaAs layer has been investigated by photoluminescence (PL). An unusual red shift of the PL emission peak has been observed for an annealing temperature (T a ) of 650 -C together with a pronounced improvement of the PL from the quantum well like heterocapping layer (QW). This behavior is attributed to the strain induced phase separation of the hetero-capping alloy. However, for T a = 750 -C, a blue shift of the QDs PL peak has been observed with respect to that of the as-grown sample. For this annealing temperature the PL intensity of the QW exceeds that of the QDs indicating a relatively prominent In/Ga interdiffusion. When annealed at 850 -C, only the PL arising from the QW can be detected in addition to a broadened low energy side band indicating the dissolution of the QDs at that temperature.