As a microscale tool for observing GaAs-Alx Ga1-xAs heterostructures, backscattered electron (BE) images in the scanning electron microscope (SEM) were compared with conventional secondary electron (SE) images. BE images were found to be more sensitive to compositional differences between GaAs and A
β¦ LIBER β¦
Preparation of quantum wires and quantum dots by deep mesa etching of A1GaAs-GaAs and InGaAs-InA1As heterostructures
β Scribed by P. Grambow; E. Vasiliadou; T. Demel; K. Kern; D. Heitmann; K. Ploog
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 368 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0167-9317
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