Quantum storage effects in n-AlGaAs/GaAs heterojunction FETs with embedded InAs QDs and localized states induced by Ga-FIB implantation
✍ Scribed by H Kim; H Sakaki
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 228 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
Quantum storage e ects have been studied on novel n-AlGaAs=GaAs heterojunction ÿeld-e ect transistors (FETs) where electron trapping sites, such as localized states induced by Ga-FIB implantation or self assembled InAs quantum dots (QDs), are embedded between the gate and two-dimensional (2D) electron channel. Charging characteristics involving di erent types of trap levels distributed spatially have been studied by analyzing the current-voltage (I -V ), capacitance-voltage (C-V ), and frequency-dependent conductance (G) measurements. Information on the trapping mechanisms of electrons and the distribution of trapping sites has been extracted. We found that the charge injection and extraction on single-electron trapping sites has in uence on the single-electron memory operation including the quantized threshold voltage (V th ) shift e ects.