GaAs-based LED on Si substrate with GaAs islands active region by droplet-epitaxy

Self-assembled GaAs local artificial sub

Self-assembled GaAs local artificial substrates on Si by droplet epitaxy

✍ S. Bietti; C. Somaschini; N. Koguchi; C. Frigeri; S. Sanguinetti 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 329 KB

The fabrication of submicrometer GaAs islands directly on Si substrates by droplet epitaxy is presented. Islands parameters, like density and size, are fully controlled through growth temperature and Ga coverage. The process is fully scalable and at low thermal budget, making these islands good cand