✦ LIBER ✦

Self-assembled GaAs local artificial substrates on Si by droplet epitaxy

✍ Scribed by S. Bietti; C. Somaschini; N. Koguchi; C. Frigeri; S. Sanguinetti

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 329 KB
Volume: 323
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.12.036

No coin nor oath required. For personal study only.

✦ Synopsis

The fabrication of submicrometer GaAs islands directly on Si substrates by droplet epitaxy is presented. Islands parameters, like density and size, are fully controlled through growth temperature and Ga coverage. The process is fully scalable and at low thermal budget, making these islands good candidates for local artificial substrates with lattice parameters, band alignment and crystalline quality as now required for the implementation of high quality III-As devices on Si.

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