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Spatially resolved Raman investigation of Si-doped GaAs layers on patterned GaAs(100) substrates grown by molecular beam epitaxy

✍ Scribed by J. Gerster; J.M. Schneider; C. Ehret; W. Limmer; R. Sauer; H. Heinecke

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
494 KB
Volume
28
Category
Article
ISSN
0026-2692

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