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Photoluminescence investigation of Si-doped GaAs grown by molecular beam epitaxy on non-(100) oriented surfaces

โœ Scribed by L. Pavesi; M. Henini

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
664 KB
Volume
28
Category
Article
ISSN
0026-2692

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GaAs has been grown by molecular beam epitaxy on Si(lO0) using different substrate preparations, different conditions for the growth of a buffer layer and different thicknesses of the active layer. The quality of the layers is assessed by the direct interpretation of the pseudodielectric function ob