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Self-Ordering of Ge Islands on Si Substrates Mediated by Local Strain Fields

✍ Scribed by K. Brunner; J. Zhu; G. Abstreiter; O. Kienzle; F. Ernst

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
117 KB
Volume
224
Category
Article
ISSN
0370-1972

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✦ Synopsis

We have fabricated linear chains and two-dimensional arrays of Ge islands by self-assembling and self-ordering processes on vicinal Si substrates.

Step bunches and stripe-like strain fields caused by underlying Si/SiGe multilayers with periodic wire-like accumulations at step edges induce an alignment of Ge islands. Repulsion of neighboring islands is caused by overlapping short-ranged strain fields surrounding partially strain relaxed dots and defines a minimum island separation. A periodic array of wires forming within the multilayer serves as a self-organized template for twodimensionally ordered Ge islands with a lateral period of 120 nm which is comparable to the island size.

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