Band discontinuity in GaAs/AlAs superlattices with InAs strained insertion-layers

✍ Scribed by T. Saito; Y. Hashimoto; T. Ikoma

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 128 KB
• Volume: 15
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1994.1078

✦ Synopsis

We have theoretically investigated the valence-band discontinuity (\left(\Delta E_{v}\right)) at the (100) GaAs/AlAs interface with the InAs strained insertion-layer. The theoretical calculation is carried out by the self-consistent tight-binding method with the (s p^{3} s^{*}) basis in the ((\mathrm{GaAs}){5} /(\mathrm{InAs}){1} /(\mathrm{AlAs}){5} /(\mathrm{InAs}){1}[100]) superlattice. (\Delta E_{\mathrm{v}}) at the (\mathrm{GaAs} / \mathrm{InAs}(1 \mathrm{ML}) / \mathrm{AlAs}) interface is calculated to be (0.50 \mathrm{eV}), which is practically equal to (\Delta E_{v}=0.51 \mathrm{eV}) at the GaAs/AlAs interface with no InAs layers. The insertion of the InAs monolayer changes the detail of valence charge density at the GaAs/AlAs interface but does not change (\Delta E_{v}). The result of calculation is in consistent with our experimental measurement by using the (\mathrm{x})-ray photoelectron spectroscopy.