Photoreflectance study of folded above-barrier states in (InAs)1/(GaAs)m strained-layer superlattices
✍ Scribed by Masaaki Nakayama; Takashi Fujita; Hitoshi Nishimura
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 162 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We have performed a photoreflectance study of the above-barrier states in ( (\mathrm{InAs}){1} /(\mathrm{GaAs}){m}) strained-layer superlattices ( (m=10) and 30 monolayers) grown on a (001) GaAs substrate by molecular-beam epitaxy. We have clearly observed the optical transitions associated with the above-barrier states at the (\Gamma) and (\pi) (miniBrillouin-zone edge) points. The layer-thickness dependence of the transition energies is explained by the zone-folding effect on the above-barrier states based on a simple Kronig-Penney analysis taking account of the lattice-misfit strain effects.