✦ LIBER ✦

Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing

✍ Scribed by K.F. Liao; P.S. Chen; S.W. Lee; L.J. Chen; C.W. Liu

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of strained silicon on

✍ Changchun Chen; Benhai Yu; Jiangfeng Liu; Qirun Dai 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 399 KB

Formation of nanocrystalline silicon fil

✍ I. E. Tyschenko; V. P. Popov; A. B. Talochkin; A. K. Gutakovskii; K. S. Zhuravle 📂 Article 📅 2004 🏛 Springer 🌐 English ⚖ 143 KB

Fabrication of high quality SiGe relaxed

✍ K. Sawano; A. Fukumoto; Y. Hoshi; J. Yamanaka; K. Nakagawa; Y. Shiraki 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 325 KB

Evolution of SiGe nanoclusters and micro

✍ Wenting Xu; Hailing Tu; Qinghua Xiao; Qing Chang; Zongfeng Li; Dali Liu 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 869 KB

Formation of Epitaxial NiSi2 by High Dos

✍ Petukhov, V. Yu. ;Khaibullin, I. B. ;Zaripov, M. M. ;Wieser, E. ;Grötzschel, R. 📂 Article 📅 1990 🏛 John Wiley and Sons 🌐 English ⚖ 454 KB

Formation of conductive layers inside di

✍ Popov, V. P.; Safronov, L. N.; Naumova, O. V.; Volodin, V. A.; Kupriyanov, I. N. 📂 Article 📅 2012 🏛 Allerton Press Inc 🌐 English ⚖ 329 KB