✦ LIBER ✦

Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions

✍ Scribed by K. Sawano; A. Fukumoto; Y. Hoshi; J. Yamanaka; K. Nakagawa; Y. Shiraki

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Strained-Si nMOSFET formed on very thin

✍ K. Sawano; A. Fukumoto; Y. Hoshi; K. Nakagawa; Y. Shiraki 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 309 KB

Relaxed SiGe-on-insulator with high Ge f

✍ Xinli Cheng; Hong Liu; Feng Zhang 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 512 KB

Characterization of strained silicon on

✍ Changchun Chen; Benhai Yu; Jiangfeng Liu; Qirun Dai 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 399 KB