✦ LIBER ✦

Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique

✍ Scribed by K. Sawano; A. Fukumoto; Y. Hoshi; K. Nakagawa; Y. Shiraki

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Fabrication of strained Si nMOSFET trans

✍ Geert Eneman; Peter Verheyen; Rita Rooyackers; Romain Delhougne; Roger Loo; Matt 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 310 KB

Fabrication of high quality SiGe relaxed

✍ K. Sawano; A. Fukumoto; Y. Hoshi; J. Yamanaka; K. Nakagawa; Y. Shiraki 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 325 KB