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Fabrication of strained Si nMOSFET transistors on thin buffer layers with selective and non-selective epitaxial growth techniques

✍ Scribed by Geert Eneman; Peter Verheyen; Rita Rooyackers; Romain Delhougne; Roger Loo; Matty Caymax; Philippe Meunier-Beillard; Kristin De Meyer; Wilfried Vandervorst


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
310 KB
Volume
8
Category
Article
ISSN
1369-8001

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