Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation

✍ Scribed by Xinli Cheng; Hong Liu; Feng Zhang

• Book ID: 108060099
• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 512 KB
• Volume: 253
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2006.09.057