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Formation of CoSi2 on strained Si0.8Ge0.2 using a sacrificial Si layer

✍ Scribed by R.A. Donaton; S. Kolodinski; M. Caymax; P. Roussel; H. Bender; B. Brijs; K. Maex


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
784 KB
Volume
91
Category
Article
ISSN
0169-4332

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The feldspars Sr 0.05 Ba 0.95 Al 2 Si 2 O 8 , BaAl 2 Ge 2 O 8 and BaGa 2 Si 2 O 8 with S.G. I2/c, and BaGa 2 Ge 2 O 8 with S.G. P2 1 /a, were studied by means of crystal structural and microstructural analyses and dielectric measurements. All the investigated densely sintered single-phase feldspars