Enhanced thermal and morphological stability of Ni(Si1−xGex) growth on -preamorphized Si0.8Ge0.2 substrate

Epitaxial growth and thermal stability o

Epitaxial growth and thermal stability of Ge1−xSnx alloys on Ge-buffered Si(0 0 1) substrates

✍ Shaojian Su; Wei Wang; Buwen Cheng; Guangze Zhang; Weixuan Hu; Chunlai Xue; Yuhu 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 736 KB

Single-crystal Ge 1 À x Sn x alloys (x ¼ 0.025, 0.052, and 0.078) with diamond cubic structure have been grown on Si(0 0 1) substrates by molecular beam epitaxy (MBE), using high-quality Ge thin films as buffer layers. The Ge 1 À x Sn x alloys are nearly fully strained and have high crystalline qual