✦ LIBER ✦

First Principle Calculation of the Leakage Current Through and Gate Dielectrics in MOSFETs

✍ Scribed by Nadimi, E.; Planitz, P.; Ottking, R.; Wieczorek, K.; Radehaus, C.

Book ID: 114619902
Publisher: IEEE
Year: 2010
Tongue: English
Weight: 660 KB
Volume: 57
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2009.2038646

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electron energy distribution for calcula

Electron energy distribution for calculation of gate leakage current in MOSFETs

✍ N. Goldsman; J. Frey 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 343 KB

First-principles studies of the intrinsi

First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

✍ Umezawa, N.; Shiraishi, K.; Ohno, T.; Watanabe, H.; Chikyow, T.; Torii, K.; Yama 📂 Article 📅 2005 🏛 American Institute of Physics 🌐 English ⚖ 396 KB

Investigation of hole-tunneling current

Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs

✍ Hongyu Yu; Yong-Tian Hou; Ming-Fu Li; Dim-Lee Kwong 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 302 KB

Model and analysis of gate leakage curre

Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs

✍ Jonghwan Lee; Bosman, G.; Green, K.R.; Ladwig, D. 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 406 KB

Two-Dimensional Tunneling Effects on the

Two-Dimensional Tunneling Effects on the Leakage Current of MOSFETs With Single Dielectric and High- Gate Stacks

✍ Luisier, M.; Schenk, A. 📂 Article 📅 2008 🏛 IEEE 🌐 English ⚖ 697 KB

Investigating the effects of the interfa

Investigating the effects of the interface defects on the gate leakage current in MOSFETs

✍ Ling-Feng Mao 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 614 KB