First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

✍ Scribed by Umezawa, N.; Shiraishi, K.; Ohno, T.; Watanabe, H.; Chikyow, T.; Torii, K.; Yamabe, K.; Yamada, K.; Kitajima, H.; Arikado, T.

• Book ID: 120474786
• Publisher: American Institute of Physics
• Year: 2005
• Tongue: English
• Weight: 396 KB
• Volume: 86
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1899232