Flat GaAs/AlGaAs multilayers without any extra facets were successfully grown on ridgetype triangles with (021)-related sidewalls having an inverted mesa on GaAs (111)A substrates by molecular beam epitaxy. The result was obtained on the basis of the large difference in the growth rate between the [
Fabrication of quantum wires on GaAs substrates patterned by in situ electron-beam lithography
✍ Scribed by M López; N Tanaka; I Matsuyama; T Ishikawa
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 390 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0038-1101
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