Flat GaAs/AlGaAs multilayers without any extra facets were successfully grown on ridgetype triangles with (021)-related sidewalls having an inverted mesa on GaAs (111)A substrates by molecular beam epitaxy. The result was obtained on the basis of the large difference in the growth rate between the [
โฆ LIBER โฆ
Fabrication of InGaAsGaAs quantum wires on a non-(111) V-grooved GaAs substrate by chemical beam epitaxy
โ Scribed by Sung-Bock Kim; Seong-Ju Park; Jeong-Rae Ro; El-Hang Lee
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 466 KB
- Volume
- 164
- Category
- Article
- ISSN
- 0022-0248
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Self-ordered InGaAs/GaAs quantum wires (QWRs) were obtained on (100) GaAs Vgrooved substrates by low-pressure metal-organic vapor phase epitaxy. Different structural and optical properties of compressively strained InGaAs wires grown on grooves exhibiting (111)A-like and (311)-like oriented facets w