Fabrication of quantum semiconductor structures by high energy electron beam lithography of an inorganic epitaxial resist on GaAs
✍ Scribed by Christophe Vieu; Franck Carcenac; Huguette Launois; Chantal Fontaine; Antoine Munoz-Yague
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 310 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
Epitaxially grown calcium strontium fluoride on gallium arsenide has been patterned by high energy electron beam lithography and wet development. Fabrication of lines and dots of (8 \mathrm{~nm}) size is reported. Electron diffraction experiments indicate that fluorine is removed under electron bombardment with the formation of a calcium and strontium oxide. The end product of the radiolysis can be selectively etched in an acetic acid solution. A dose requirement of around (2 \times 10^{4} \mathrm{C} / \mathrm{cm}^{2}) was necessary to form these features but a large dose latitude was observed. Possible applications of this epitaxial inorganic resist for the fabrication of quantum semiconductor structures are discussed.