Fabrication of InGaAs strained quantum wires using selective MOCVD growth on SiO2-patterned GaAs substrate

Fabrication and characterization of stra

Fabrication and characterization of strained InGaAs quantum wires grown on high index V-grooved GaAs substrates by LP-MOVPE

✍ A. Passaseo; R. Rinaldi; M. De Giorgi; R. Cingolani; M. Catalano; A. Taurino 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 263 KB

Self-ordered InGaAs/GaAs quantum wires (QWRs) were obtained on (100) GaAs Vgrooved substrates by low-pressure metal-organic vapor phase epitaxy. Different structural and optical properties of compressively strained InGaAs wires grown on grooves exhibiting (111)A-like and (311)-like oriented facets w