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Fabrication of nanocrystal memories by ultra low energy ion implantation

โœ Scribed by N. Cherkashin; C. Bonafos; H. Coffin; M. Carrada; S. Schamm; G. Ben Assayag; D. Chassaing; P. Dimitrakis; P. Normand; M. Perego; M. Fanciulli; T. Muller; K. H. Heinig; A. Claverie


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
267 KB
Volume
2
Category
Article
ISSN
1862-6351

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Silicon nanocrystal formation in thin th
โœ P. Normand; D. Tsoukalas; E. Kapetanakis; J.A. Van Den Berg; D.G. Armour; J. Sto ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 271 KB

Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal