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Fabrication of 22 nm T-gates for HEMT applications

โœ Scribed by S. Bentley; X. Li; D.A.J. Moran; I.G. Thayne


Book ID
104051917
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
423 KB
Volume
85
Category
Article
ISSN
0167-9317

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Two methods of realising 10 nm T-ga
โœ S. Bentley; X. Li; D.A.J. Moran; I.G. Thayne ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 476 KB

This paper presents two separate methods for the fabrication of 10 nm footprint T-gates using a two-step gate process. We examine the limits of lithographic and pattern transfer processes using the exposure of ZEP520A resist by electron beam lithography, suitable development processes and subsequent