30 nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors

✍ Scribed by X. Li; X. Cao; H. Zhou; C.D.W. Wilkinson; S. Thoms; D. Macintyre; M. Holland; I.G. Thayne

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 288 KB
• Volume: 83
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2006.01.073