Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

✍ Scribed by Li, Haiou; Feng, Zhihong; Tang, Chak Wah; Lau, Kei May

• Book ID: 121342538
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 200 KB
• Volume: 32
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2011.2159824