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Fabrication and characterization of compact 100nm scale metal oxide semiconductor field effect transistors

✍ Scribed by C.M. Reeves; S.J. Wind; F.J. Hohn; J.J. Bucchignano; Y.T. Lii; D.P. Klaus

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 763 KB
Volume: 21
Category: Article
ISSN: 0167-9317
DOI: 10.1016/0167-9317(93)90102-b

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