✦ LIBER ✦

The anodic oxide of InP and its application to InP metal/insulator/semiconductor field effect transistors

✍ Scribed by A. Yamamoto; A. Shibukawa; M. Yamaguchi; C. Uemura

Publisher: Elsevier Science
Year: 1983
Tongue: English
Weight: 584 KB
Volume: 103
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(83)90428-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Mesa- and planar-type InP metal/insulato

Mesa- and planar-type InP metal/insulator/ semiconductor field effect transistors with plasma anodic Al2O3 gate oxide

✍ Y. Hirayama; F. Koshiga; T. Sugano 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 301 KB

Factors influencing the performance of I

Factors influencing the performance of InP metal/insulator/semiconductor field effect transistors

✍ D.C. Cameron; L.D. Irving; C.R. Whitehouse; J. Woodward; G.T. Brown; B. Cockayne 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 575 KB

Electrical and optical characteristics o

Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator

✍ T Sawada; H Hasegawa; H Ohno 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 556 KB

Investigation of Al/(Al,Ga)As/GaAs metal

Investigation of Al/(Al,Ga)As/GaAs metal/insulator/ semiconductor-type structures and application to buried interface field effect transistors

✍ T.J. Drummond; D. Arnold; R. Fischer; H. Morkoç 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 645 KB

Analytical performance evaluation of AlG

Analytical performance evaluation of AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor and its comparison with conventional HFETs for high power microwave applications

✍ Ruchika Aggarwal; Anju Agrawal; Mridula Gupta; R. S. Gupta 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 475 KB

## Abstract In this work, a comprehensive analytical model for AlGaN/GaN MISHFET has been presented to evaluate the drain current characteristics, transconductance, and cut‐off frequency of the insulated device. The model takes into account polynomial dependence of sheet carrier density on position

Hydrogen and hot electron defect creatio

Hydrogen and hot electron defect creation at the Si(100)/SiO2interface of metal-oxide-semiconductor field effect transistors

✍ Blair R. Tuttle; William McMahon; Karl Hess 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 82 KB

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk si