✦ LIBER ✦

Extremely high electron mobility of pseudomorphic In0.74Ga0.26As/In0.46Al0.54As modulation-doped quantum wells grown on (411)AInP substrates by molecular-beam epitaxy

✍ Scribed by Kitada, T.; Aoki, T.; Watanabe, I.; Shimomura, S.; Hiyamizu, S.

Book ID: 115481864
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 295 KB
Volume: 85
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1807023

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Super-flat interfaces in In0.53Ga0.47As/

Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

✍ Takahiro Kitada; Tatsuya Saeki; Masanobu Ohashi; Satoshi Shimomura; Akira Adachi 📂 Article 📅 1998 🏛 Springer US 🌐 English ⚖ 436 KB

Light-induced mobility enhancement in de

Light-induced mobility enhancement in delta-doped GaAs/In[sub 0.26]Ga[sub 0.74]As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)

✍ Zervos, M.; Elliott, M.; Westwood, D. I. 📂 Article 📅 1999 🏛 American Institute of Physics 🌐 English ⚖ 376 KB

Electron mobility in selectively Si-dope

Electron mobility in selectively Si-doped GaAs/N–Al0.3Ga0.7As quantum well heterostructures with super-flat interfaces grown on (411)A GaAs substrates by molecular beam epitaxy

✍ Satoshi Shimomura; Keisuke Shinohara; Kenji Kasahara; Satoshi Hiyamizu 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 124 KB

Fabrication and characteristics of In0.4

Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy

✍ S.F. Yoon; B.P. Gay; H.Q. Zheng; K.S. Ang; H. Wang; G.I. Ng 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 313 KB

In 0.48 Ga 0.52 P/In 0.20 Ga 0.80 As/GaAs pseudomorphic high electron mobility transistor (p-HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. The electron mobility and sheet carrier density at room temperature were 1700 cm 2 /Vs and 3

Extremely flat interfaces in GaAs/AlGaAs

Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content (0.7) grown on GaAs (411)A substrates by molecular beam epitaxy

✍ Satoshi Shimomura; Shinjiroh Kaneko; Takeharu Motokawa; Keisuke Shinohara; Akira 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 476 KB